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Choi, J., Wang, Z., Shen, W., Dornfeld, D. and Hsu, W. (2005), “Conditioning Effect on Pad Surface Height Distribution in Copper CMP”, 2nd Int'l Conference on Planarization CMP, and Its Application, Korea CMPUG, Seoul, Nov 17-19, pp. 403-410.

Download the Paper (304 K, PDF file) - November 1, 2005 Tell a colleague about it. Printing Tips: Select 'print as image' in the Acrobat print dialog if you have trouble printing.

ABSTRACT:
In this study, surface topographies of different pad samples from varying in-situ conditioning processes and differing pad life stages have been measured by white light interferometer. Copper removal rate and within wafer non-uniformity was monitored during pad degradation test. Pad surface height distribution, measured from white light interferometer, was more dependent on the plastic deformation and wear at the retaining ring and wafer contact region than on in-situ conditioning. Also, the overall removal rate in copper CMP was more dependent on the slurry flow than on pad surface height distribution.

SUGGESTED CITATION:
Jihong Choi, Z. Wang, W. Shen, David Dornfeld, and W. Hsu, "Conditioning Effect on Pad Surface Height Distribution in Copper CMP" (November 1, 2005). Laboratory for Manufacturing and Sustainability. Precision Manufacturing Group. Paper choi_05_1.
http://repositories.cdlib.org/lma/pmg/choi_05_1