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Material Removal Regions in Chemical Mechanical Polishing: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, Part 1
Jianfeng Luo, UC Berkeley
David Dornfeld, UC Berkeley
Luo, J. F. and Dornfeld, D. A. (2003), “Material removal regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-pad Contact Area”, IEEE Trans. Semiconductor Manufacturing, vol. 16, no. 1, pp. 45-56.
ABSTRACT: A material removal rate (MRR) model as a function of
abrasive weight concentration has been proposed by extending a material
removal model developed earlier [1-2]. With an increase of the weight
concentration of abrasives/MRR, three regions of material removal exist:
first, a chemically dominant and rapid increasing region, whose range is
determined by the generation/passivation rate and hardness of the surface
passivation layer, second, a mechanically dominant linear region, where
the material removal is proportional to the weight concentration, and third,
a mechanical dominant saturation region, where the material removal
saturates because the total contact area is fully occupied by the abrasives.
The passive layer of the wafer surface is proposed to be a bi-layer
structure. In the first part of this paper, a detailed model is proposed to
explain that the transition from the first to the second region is due to a
transition from a wafer surface covered with a single soft material to a
surface covered with both soft and hard materials. The chemicals
contribute to the material removal through the generation rate of the upper
softer layer of the passive films. The slope of the linear region is a
function of abrasive size distribution, and the saturation removal rate is a
function of abrasive size distribution and wafer-pad contact area. These
are supported by experimental results to be discussed in the second part of
this paper [39]. The model can help to clarify the roles of chemicals,
wafer-pad contact area and abrasive size distribution in chemical
mechanical polishing.
SUGGESTED CITATION: Jianfeng Luo and David Dornfeld,
"Material Removal Regions in Chemical Mechanical Polishing: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, Part 1 "
(January 1, 2003).
Laboratory for Manufacturing and Sustainability.
Precision Manufacturing Group.
Paper luo_03_1.
http://repositories.cdlib.org/lma/pmg/luo_03_1
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